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商品項目:16291
庫存現貨
DATE - 2024/11/06
Sharp 紅外線發射器 Everlight替代料比較
電性規格/品牌料號                   EVERLIGHT
IR968-8P		 SHARP
GL480E00000F
Product Infrared Emitting Diode Infrared Emitting Diode
Continuous Forward Current IF(IF)   mA 50 50
Peak Forward Current(*1)(IFP)   mA 500 1000
Reverse Voltage(VR)   V 5 6
Operating Temperature(Topr)   ℃ -40 ~ +85 -25~ +85
Storage Temperature(Tstg)   ℃ -40 ~ +100 -40 ~ +85
Soldering Temperature(Tsol)   ℃ 260 260
Power Dissipation at (or below)
25℃Free Air Temperature(Pd)   mW		 75 75
Electro-Optical Characteristics (Ta=25℃) 　 　
Collector Current Ic(on)  μA 465(Min)-XXX(Typ)-1274(Max) X
Peak Wavelength λp  nm 940(Typ) 950(Typ)
Spectral Bandwidth △λ  nm 45(Typ) X
View Angle 2θ1/2  Deg 25(Typ) X
Forward Voltage VF  V 1.2(Typ)-1.5(Max) 1.2(Typ)-1.4(Max)
Reverse Current IR  μA 10(Max) 10(Max)
SPEC
 
電性規格/品牌料號                   EVERLIGHT
PT968-8C		 SHARP
PT480E00000F
Product 1.6mm Side Looking
Phototransistor		 1.6mm Side Looking
Phototransistor
Collector-Emitter Voltage(VcEo)  V 30 35
Emitter-Collector-Voltage(VECO)  V 5 6
Collector Current(le)  mA 20 20
Operatinq Temperature(Topr)   -25 ~ +85 -25 ~ +85
Storage Temperature(Tstg)  °C -40 ~ +85 -40 ~ +85
Soldering Temperature (*1)(Tsol)  °C 260 260
Power Dissipation at (or below) 25°C Free Air Temperature(Pd)  mW 75 75
Rang of Spectral Bandwidth(Ao.5)  nm 400(Min)-XXX(Typ)-1100(Max) X
Wavelength of Peak Sensitivity(AF)  nm 940(Typ) 800Typ)
Collector-Emitter Breakdown Voltage(BVcEO)  V 30(Typ) 35(Min)
Emitter-Collector Breakdown Voltage(BVECO)  V 5(Typ) 6(Typ)
Collector Dark Current(IcEo)  nA 100(Max) 1(Typ)-100(Max)
Collector-Emitter Saturation Voltage(VcE(sat))  V 0.4(Max) 0.1(Typ(-0.4(Max)
On State Collector Current(lc(on))  mA 1.56(Min)-XXX(Typ)-3.41(Max) 1.56(Min)-XXX(Typ)-3.41(Max)
spec