封裝／外殼	TO-220AB
標準包裝數量	50/Tube，1000/Box 管裝

HEXFET® Power MOSFET


 Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

Lead-Free

Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the
fast switching speed andruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremelyefficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power
dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface
mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance
and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-profile application.
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HEXFET®功率MOSFET

 先進工藝技術
動態dv / dt額定值
175°C工作溫度
快速切換
完全雪崩等級
輕鬆並聯
簡單驅動器要求
無鉛

描述
國際整流器公司的第五代HEXFET®功率MOSFET採用先進的處理技術，可實現每矽面積極低的導通電阻。
這項優勢與HEXFET功率MOSFET眾所周知的快速開關速度和堅固耐用的器件設計相結合，
為設計人員提供了一種非常有效和可靠的器件，可廣泛用於各種應用中。
TO-220封裝普遍適用於所有功耗約為50瓦的商業工業應用。
TO-220的低熱阻和低封裝成本有助於其在整個行業中的廣泛接受。
D2Pak是一種表面安裝電源封裝，能夠容納高達HEX-4的裸片尺寸。在任何現有的表面貼裝封裝中，
它都具有最高的功率性能和最低的導通電阻。 D2Pak的內部連接電阻低，因此適合於大電流應用，
在典型的表面安裝應用中可以耗散高達2.0W的功率。
通孔版本（IRF630NL）可用於薄型應用。