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- 0603 1% 1/10W
- 0603 5% 1/10W
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- 0805 0.5% 1/8W
- 0805 1% 1/8W
- 0805 5% 1/8W
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- 1206 1% 1/2W
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- 1206 5% 1/4W
- 1206 5% 1/2W
- 1210 1% 1/2W
- 1210 1% 0.33W
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- 1210 5% 1/2W
- 1218 5% 1W
- 1225 5% 3W
- 1812 5% 3/4W
- 2010 1% 3/4W
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- 2010 5% 1/2W
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- 2512 1% 1W
- 2512 1% 2W
- 2512 5% 3/4W
- 2512 5% 1W
- 2512 5% 2W
- SAMPLE KIT 樣品本
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- ZH 1.5mm 90度
- P:1.0mm 90度 SMD
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- 歐式端子
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- KA 系列(DC - AC)
- KB 系列(DC - AC)
- KC系列(CURRENT- VAC)
- KD 系列(DC - AC)
- KE 系列 (DC - DC)
- KF 系列 (DC - DC)
- KG 系列 (DC - DC)
- KL 系列(AC - AC)
- KM 系列 (AC - AC)
- KN 系列 (AC - DC)
- KR 系列 (VR - AC)
- KS 系列 (Mini TYPE) (DC-AC)
- KS 系列 (Mini TYPE) (DC-DC)
- KT 系列 (DC-DC)
- KT 系列 (DC-AC)
- IO-X-20C04A 系列 (DC - AC)(1/2/4/8 Port)
- IO-X-0604D 系列 (DC - DC)(1/2/4/8 Port)
- 三相三線 (電熱式負截) 系列
- 三相三線 (電感式負截) 系列
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N Channel Product CEM6362 60V 6A SO-8
| 附件下載 | |
| 商品名稱 | N-Channel Enhancement Mode Field Effect Transistor |
| 訂購數量 | |
| 依數量訂價 | 5 NTD |
| FLYiNG 零件編號 | ICCEM6362CET |
| FLYiNG 庫存現貨 | 30 |
| 製造商 | CET |
| 製造商零件編號 | CEM6362 |
| 說明 | N Channel Product CEM6362 60V 6A SO-8 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 5 |
| 10~99 | 4 |
| Power MOSFET | Single N-Channel Enhancement Mode Field Effect Transistor |
| 製造商 | CET |
| 系列 | CEM6362 |
| 原廠料號 | CEM6362 |
| 漏-源電壓VDS | 60V |
| 閘-源電壓 VGS | ±20V |
| 漏極電流ID | 6A |
| 漏-源擊穿電壓BVDSS | 60V |
| 閘極閥值電壓VGS(TH) | 1~2.5V |
| 功耗 | 2.5W |
| 工作溫度 | -55 to 150 °C |
| 無鉛狀態 RoHS | RoHS |
| 安裝類型 | SMD 表面黏著式 |
| 封裝／外殼 | SO-8(SOP-8) |
| 標準包裝數量 | 100/Tube,2500/Reel,5000/Box |
| 重量 | 73.34mg |
CEM6362
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEM6362
N溝道增強型場效應晶體管
特徵
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
- 60V, 6A, RDS(ON) = 43mohm @VGS = 10V.
RDS(ON) = 49mohm @VGS = 4.5V. - Super high dense cell design for extremely low RDS(ON).
- High power and current handing capability.
- RoHS compliant.
- Surface mount Package.
CEM6362
N溝道增強型場效應晶體管
特徵
- 60V、6A、RDS(ON) = 43mohm @VGS = 10V。
RDS(ON) = 49mohm @VGS = 4.5V。 - 超高密度電池設計，可實現極低的 RDS(ON)。
- 高功率和電流處理能力。
- 符合 RoHS 標準。
- 表面貼裝封裝。
