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- 0603 1% 1/10W
- 0603 5% 1/10W
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- 0805 0.5% 1/8W
- 0805 1% 1/8W
- 0805 5% 1/8W
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- 1210 1% 0.33W
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- 2512 1% 1W
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P Channel CEM6967 60V 3.3A SO-8
| 附件下載 | |
| 商品名稱 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 訂購數量 | |
| 依數量訂價 | 8 NTD |
| FLYiNG 零件編號 | ICCEM6967CET |
| FLYiNG 庫存現貨 | 30 |
| 製造商 | CET |
| 製造商零件編號 | CEM6967 |
| 說明 | P Channel CEM6967 60V 3.3A SO-8 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 8 |
| 10~99 | 6 |
| 電晶體 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 原廠料號 | CEM6967 |
| 漏-源電壓VDS | -60V |
| 閘-源電壓VGS | ±20V |
| 漏-源擊穿電壓BVDSS | -60V |
| 漏極電流ID | -3.3A |
| 閘極閥值電流VGS(th) | -1~-3V |
| 功耗 | 2W |
| 工作溫度 | -55°C ~ 150°C |
| 無鉛狀態RoHS | RoHS |
| 安裝類型 | SMD 表面黏著式 |
| 封裝／外殼 | SO-8(SOP-8) |
| 標準包裝數量 | 100/Tube,2500/Reel,5000/Box |
| 重量 | 73.34mg |
CEM6967
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEM6967
雙 P 溝道增強模式場效應晶體管
特徵
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
- 60V, -3.3A, RDS(ON) = 115mohm @VGS = -10V.
RDS(ON) = 150mohm @VGS = -4.5V. - Super high dense cell design for extremely low RDS(ON).
- High power and current handing capability.
- RoHS compliant.
- Surface mount Package.
CEM6967
雙 P 溝道增強模式場效應晶體管
特徵
- 60V，-3.3A，RDS(ON) = 115mohm @VGS = -10V。
RDS(ON) = 150mohm @VGS = -4.5V。 - 超高密度電池設計，可實現極低的 RDS(ON)。
- 高功率和電流處理能力。
- 符合 RoHS 標準。
- 表面貼裝封裝。
