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- 0402 5% 1/16W
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- 0603 0.1% 1/10W
- 0603 0.5% 1/10W
- 0603 1% 1/10W
- 0603 5% 1/10W
- 0805 0.1% 1/4W
- 0805 0.1% 1/8W
- 0805 0.5% 1/8W
- 0805 1% 1/8W
- 0805 5% 1/8W
- 1206 0.5% 1/4W
- 1206 1% 1/4W
- 1206 1% 1/2W
- 1206 1% 1W
- 1206 5% 1/4W
- 1206 5% 1/2W
- 1210 1% 1/2W
- 1210 1% 0.33W
- 1210 5% 0.33W
- 1210 5% 1/2W
- 1218 5% 1W
- 1225 5% 3W
- 1812 5% 3/4W
- 2010 1% 3/4W
- 2010 1% 1/2W
- 2010 1% 1W
- 2010 5% 1/2W
- 2010 5% 3/4W
- 2512 1% 1W
- 2512 1% 2W
- 2512 5% 3/4W
- 2512 5% 1W
- 2512 5% 2W
- SAMPLE KIT 樣品本
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- COMCHIP 0.15W 0603/SOD-523F
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首頁 > 產品介紹
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N Channel Product CEUF640 30V 15A TO-252
| 附件下載 | |
| 商品名稱 | N-Channel Enhancement Mode Field Effect Transistor |
| 訂購數量 | |
| 依數量訂價 | 20 NTD |
| FLYiNG 零件編號 | ICCEUF640CET |
| FLYiNG 庫存現貨 | 電洽/Contact |
| 製造商 | CET |
| 製造商零件編號 | CEUF640 |
| 說明 | N Channel Product CEUF640 30V 15A TO-252 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 20 |
| 10~99 | 18 |
| 100~999 | 15 |
| 1000~ | 10 |
| Power MOSFET | N-Channel Enhancement Mode Field Effect Transistor |
| 製造商 | CET |
| 系列 | CEDF640/CEUF640 |
| 原廠料號 | CEUF640 |
| 漏-源電壓VDS | 200V |
| 閘-源電壓 VGS | ±20V |
| 漏極電流ID | 15A |
| 漏-源擊穿電壓BVDSS | 200V |
| 閘極閥值電壓VGS(TH) | 2~4V |
| 功耗 | 83W |
| 工作溫度 | -55°C ~ 150°C |
| 無鉛狀態 RoHS | RoHS |
| 安裝類型 | SMD 表面黏著式 |
CEDF640/CEUF640
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEDF640/CEUF640
N溝道增強型場效應晶體管
特徵
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
- 200V, 15A, RDS(ON) = 0.15 W @VGS = 10V.
- Super high dense cell design for extremely low RDS(ON).
- High power and current handing capability.
- Lead free product is acquired.
- TO-251 & TO-252 package.
CEDF640/CEUF640
N溝道增強型場效應晶體管
特徵
- 200V, 15A, RDS(ON) = 0.15 W @VGS = 10V.
- 超高密度電池設計，可實現極低的 RDS(ON)。
- 高功率和電流處理能力。
- 獲得無鉛產品。
- TO-251 和 TO-252 封裝。
