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- 0603 1% 1/10W
- 0603 5% 1/10W
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- 0805 0.5% 1/8W
- 0805 1% 1/8W
- 0805 5% 1/8W
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- 1206 5% 1/4W
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- 1210 1% 1/2W
- 1210 1% 0.33W
- 1210 5% 0.33W
- 1210 5% 1/2W
- 1218 5% 1W
- 1225 5% 3W
- 1812 5% 3/4W
- 2010 1% 3/4W
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- 2512 1% 1W
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- 2512 5% 2W
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- KN 系列 (AC - DC)
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- KS 系列 (Mini TYPE) (DC-AC)
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N Channel Product CEU11N65S 650V 8A TO-252
| 附件下載 | |
| 商品名稱 | N-Channel Enhancement Mode Field Effect Transistor |
| 訂購數量 | |
| 依數量訂價 | 18 NTD |
| FLYiNG 零件編號 | ICCEU11N65SCET |
| FLYiNG 庫存現貨 | 25 |
| 製造商 | CET |
| 製造商零件編號 | CEU11N65S |
| 說明 | N Channel Product CEU11N65S 650V 8A TO-252 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 18 |
| 10~99 | 14 |
| 電晶體類型 | N-Channel Enhancement Mode Field Effect Transistor |
| 原廠料號 | CEU11N65S |
| 漏-源電壓VDS | 650V |
| 閘-源電壓 VGS | ±20V |
| 漏極電流ID | 8A |
| 漏-源擊穿電壓BVDSS | 650V |
| 閘極閥值電壓VGS(TH) | 2~4V |
| 功耗 | 69W |
| 工作溫度 | -55°C ~ 150°C |
| 無鉛狀態RoHS | RoHS |
| 安裝類型 | SMD 表面黏著式 |
| 封裝／外殼 | TO-252(D-PAK) |
| 標準包裝數量 | 2500/REEL |
| 重量 | 325mg |
CED11N65S/CEU11N65S
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CED11N65S/CEU11N65S
N溝道增強型場效應晶體管
特徵
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
- 650V, 8A, RDS(ON) = 0.42ohm @VGS = 10V.
- Super high dense cell design for extremely low RDS(ON).
- High power and current handing capability.
- RoHS compliant.
- TO-251 & TO-252 package.
CED11N65S/CEU11N65S
N溝道增強型場效應晶體管
特徵
- 650V，8A，RDS(ON) = 0.42ohm @VGS = 10V。
- 超高密度電池設計，可實現極低的 RDS(ON)。
- 高功率和電流處理能力。
- 符合 RoHS 標準。
- TO-251 & TO-252 封裝。
