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- 1210 1% 0.33W
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- 1218 5% 1W
- 1225 5% 3W
- 1812 5% 3/4W
- 2010 1% 3/4W
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- 2512 1% 1W
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N Channel Product CEU1188SA 800V 6.8A TO-252
| 附件下載 | |
| 商品名稱 | N-Channel Enhancement Mode Field Effect Transistor |
| 訂購數量 | |
| 依數量訂價 | 24 NTD |
| FLYiNG 零件編號 | ICCEU1188SACET |
| FLYiNG 庫存現貨 | 30 |
| 製造商 | CET |
| 製造商零件編號 | CEU1188SA |
| 說明 | N Channel Product CEU1188SA 800V 6.8A TO-252 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 24 |
| 10~99 | 19 |
| 電晶體類型 | N-Channel Enhancement Mode Field Effect Transistor |
| 原廠料號 | CEU1188SA |
| 漏-源電壓VDS | 800V |
| 閘-源電壓 VGS | ±30V |
| 漏極電流ID | 6.8A |
| 漏-源擊穿電壓BVDSS | 800V |
| 閘極閥值電壓VGS(TH) | 2~4V |
| 功耗 | 89W |
| 工作溫度 | -55°C ~ 150°C |
| 無鉛狀態RoHS | RoHS |
| 安裝類型 | SMD 表面黏著式 |
| 封裝／外殼 | TO-252(D-PAK) |
| 標準包裝數量 | 2.5K/R |
| 重量 | 325mg |
CED1188SA/CEU1188SA
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CED1188SA/CEU1188SA
N溝道增強型場效應晶體管
特徵
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
- 800V, 6.8A, RDS(ON) = 0.72ohm @VGS = 10V.
- Super high dense cell design for extremely low RDS(ON).
- High power and current handing capability.
- RoHS compliant.
- TO-251 & TO-252 package.
CED1188SA/CEU1188SA
N溝道增強型場效應晶體管
特徵
- 800V，6.8A，RDS(ON) = 0.72ohm @VGS = 10V。
- 超高密度電池設計，可實現極低的 RDS(ON)。
- 高功率和電流處理能力。
- 符合 RoHS 標準。
- TO-251 & TO-252 封裝。
