圖片僅供參考
FLYiNG 零件編號 | IC4NM65AGTM3TUTC |
FLYiNG 庫存現貨 | 15 |
製造商 | UTC |
製造商零件編號 | 4NM65AG-TM3-T |
說明 | RoHS / Halogen Free |
無鉛狀態 / RoHS 指令狀態 | RoHS |
Power MOSFET | N-CHANNEL SUPER-JUNCTION MOSFET |
製造商 | UTC |
系列 | 4NM65A |
原廠料號 | 4NM65AG-TM3-T |
漏-源電壓VDSS | 650V |
閘-源電壓 VGSS | ±30V |
漏極電流ID | 4A |
漏-源擊穿電壓BVDSS | 650V |
閘極閥值電壓VGS(TH) | 2.5~4.5V |
功耗 | 45W |
接面溫度 | 150°C |
無鉛狀態 RoHS | RoHS / Halogen Free |
安裝類型 | DIP 引腳 |
封裝/外殼 | TO-251 |
標準包裝數量 | 3000/REEL 捲軸 |
4NM65A Power MOSFET
4A, 650V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM65A is a high voltage super junction MOSFET and is designed to have better characteristics.
The UTC 4NM65A Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications.
FEATURES
U74HC138 CMOS集成電路
3 到 8 線路解碼器/解復用器
描述
UTC 4NM65A 是一種高壓超級結 MOSFET,旨在具有更好的特性。
UTC 4NM65A 利用先進的電荷平衡技術,提高系統效率,改善 EMI 和可靠性。 如低柵極電荷、低通態電阻並具有高功率密度和高堅固雪崩特性。 這種超級結 MOSFET 通常用於 AC/DC 電源轉換和工業電源應用。
特徵
4A, 650V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM65A is a high voltage super junction MOSFET and is designed to have better characteristics.
The UTC 4NM65A Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications.
FEATURES
- RDS(ON) ≤ 1.44 Ω @ VGS=10V, ID=2.0A
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
U74HC138 CMOS集成電路
3 到 8 線路解碼器/解復用器
描述
UTC 4NM65A 是一種高壓超級結 MOSFET,旨在具有更好的特性。
UTC 4NM65A 利用先進的電荷平衡技術,提高系統效率,改善 EMI 和可靠性。 如低柵極電荷、低通態電阻並具有高功率密度和高堅固雪崩特性。 這種超級結 MOSFET 通常用於 AC/DC 電源轉換和工業電源應用。
特徵
- 工作電壓為 2.0V ~ 6.0V
- 低輸入電流:100nA(最大值)
- 低靜態電流:最大 8μA
- 典型 tPD=15ns
- 輸出驅動:4mA @ 5V