| FLYiNG 零件編號 | IC1N60GTN3RUTC |
| FLYiNG 庫存現貨 | 電洽/Contact |
| 製造商 | UTC |
| 製造商零件編號 | 1N60G-TN3-R |
| 說明 | 1N60L-TM3-B TO-251 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS / Halogen Free |
| Power MOSFET | Planar Power MOSFET & DEPLETION-MODE MOSFET |
| 製造商 | UTC |
| 系列 | 1N60 |
| 原廠料號 | 1N60L-TM3-B TO-251 |
| 漏-源電壓VDSS | 600V |
| 閘-源電壓 VGSS | ±30V |
| 漏極電流ID | 1.2A |
| 漏-源擊穿電壓BVDSS | 650V |
| 閘極閥值電壓VGS(TH) | 2~4V |
| 功耗 | 28W |
| 工作溫度 | -55 ~ +150°C |
| 無鉛狀態 RoHS | RoHS / Halogen Free |
| 安裝類型 | DIP 引腳 |
| 封裝／外殼 | TO-251 |
文件:1N60.png)
無衝突金屬聲明書.png)
1N60 Power MOSFET
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
1N60 功率 MOSFET
1.2A，600V N 通道
功率 MOSFET
描述
UTC 1N60 是一款高壓 MOSFET，設計具有更好的特性，如快速開關時間、低閘極電荷、低開通電阻和高耐受雪崩特性。這種功率 MOSFET 通常用於電源供應器中的高速開關應用、PWM 馬達控制、高效率 DC 對 DC 轉換器和橋路電路。
特點
無衝突金屬聲明書
1N60 Power MOSFET
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
- RDS(ON) < 11.5Ω @ VGS=10V, ID=0.6A
- Ultra Low gate charge (typical 5.0nC)
- Low reverse transfer capacitance (CRSS = typical 3.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
1N60 功率 MOSFET
1.2A，600V N 通道
功率 MOSFET
描述
UTC 1N60 是一款高壓 MOSFET，設計具有更好的特性，如快速開關時間、低閘極電荷、低開通電阻和高耐受雪崩特性。這種功率 MOSFET 通常用於電源供應器中的高速開關應用、PWM 馬達控制、高效率 DC 對 DC 轉換器和橋路電路。
特點
- RDS(ON) < 11.5Ω @ VGS=10V, ID=0.6A
- 超低閘極電荷（典型值 5.0nC）
- 低反向傳輸電容（CRSS = 典型值 3.0 pF）
- 快速開關能力
- 指定雪崩能量
- 改進的 dv/dt 能力，高耐用性
