| FLYiNG 零件編號 | ICGSM7002KJZFGS |
| FLYiNG 庫存現貨 | 6,000 |
| 製造商 | Globaltech Semi |
| 製造商零件編號 | GSM7002KJZF |
| 說明 | GSM7002KJZF SOT-23 GS |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 電晶體 Transistor | 60V N-Channel Enhancement Mode MOSFET |
| 製造商 | Globaltech Semi |
| 系列 | GSM7002K |
| 原廠料號 | GSM7002KJZF |
| 漏-源電壓VDS | 60V |
| 閘-源電壓 VGS | 20V |
| 漏極電流ID | 0.3A |
| 漏-源擊穿電壓BVDSS | 60V |
| 閘極閥值電壓VGS(TH) | 2V |
| 功耗 | 0.35W |
| 封裝／外殼 | SOT-23 |
| 安裝類型 | SMD 表面黏著式 |
| 無鉛狀態 RoHS | RoHS |
| 標準包裝數量 | 3000/REEL |
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GSM7002K
60V N-Channel Enhancement Mode MOSFET
Product Description
GSM7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other
battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
GSM7002K
60V N-Channel Enhancement Mode MOSFET
Product Description
GSM7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other
battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
- 60V/0.5A , RDS(ON)=2.4 GS=10V
- 60V/0.3A , RDS(ON)=3 GS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- ESD Protection (2KV) Diode design-in
- SOT-23 package design
- Drivers:Relays,ASolenoids,ALamps,AHammers, Display, Memories, Transistors, etc.
- HighAsaturationAcurrentAcapability.A Direct Logic-Level Interface: TTL/CMOS
- Battery Operated Systems
- Solid-State Relays
GSM7002K
60V N 通道增強型 MOSFET
產品描述
GSM7002K 是一款 N 通道增強型 MOSFET，採用先進的溝槽技術（Advanced Trench Technology），可提供出色的 RDS(ON) 和低柵極電荷。
此元件特別適用於低電壓電源管理，例如智慧型手機、筆記型電腦及其他電池供電電路。此外，在商業與工業表面貼裝應用中，當需要低線路功率損耗時，該元件是一個理想的選擇。
產品特性
- 60V / 0.5A，RDS(ON) = 2.4 Ω @ VGS = 10V
- 60V / 0.3A，RDS(ON) = 3 Ω @ VGS = 4.5V
- 超高密度單元設計，實現極低 RDS(ON)
- 優異的導通電阻與最大直流電流承載能力
- 內建 ESD（靜電防護）二極體，保護能力達 2KV
- SOT-23 封裝設計
應用領域
- 驅動器：繼電器、電磁閥、燈、擊錘、顯示器、記憶體、電晶體等
- 高飽和電流能力，可直接與 TTL/CMOS 邏輯電路介接
- 電池供電系統
- 固態繼電器（Solid-State Relays）
