| FLYiNG 零件編號 | ICIRF9Z34NPBFINFINEON |
| FLYiNG 庫存現貨 | 電洽/Contact |
| 製造商 | INFINEON |
| 製造商零件編號 | IRF9Z34NPBF |
| 說明 | IRF9Z34NPBF TO-220AB INFINEON |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 20 |
| 10~99 | 15 |
| 1000~ | 12 |
| FET 類型 | P通道 |
| 汲極至源極電壓 (Vdss) | 55V |
| 連續汲極電流 (Id) | 19A |
| 驅動電壓 | 10V |
| Rds On | 100mOhm |
| Vgs(th) | 4V@250uA |
| Vgs (最大值) | ±20V |
| 功率耗散 | 68W |
| 工作溫度 | -55°C ~ 175°C |
| 安裝類型 | DIP通孔式 |
| 封裝／外殼 | TO-220AB |
| 標準包裝數量 | 50/Tube，1000/Box 管裝 |
文件:IRF9Z34NPBF.png)
IRF9Z34NPBF
HEXFET® Power MOSFET
IRF9Z34NPBF
HEXFET® Power MOSFET
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche
- Lead-Free
Fifth Generation HEXFETs from International Rectifier utilize advanced peocessing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRF9Z34NPBF
HEXFET® 功率 MOSFET
特性
- 採用先進製程技術
- 動態 dv/dt 耐受能力
- 最高工作溫度 175°C
- 高速切換特性
- P 通道 (P-Channel)
- 具備完全雪崩耐受能力 (Fully Avalanche)
- 無鉛 (Lead-Free)
產品描述
國際整流器 (International Rectifier) 的第五代 HEXFET 採用先進的製程技術，在相同晶片面積下實現極低的導通電阻。這項優勢結合了 HEXFET 功率 MOSFET 所具備的高速切換特性及堅固耐用的設計，使其成為各類應用中高效且可靠的選擇。
TO-220 封裝因其低熱阻與低成本特性，在商業及工業應用中廣受青睞，適用於功耗約 50W 以內的場合，並在業界獲得廣泛接受。
